SiC Device / R&D Achievements
SiC device -Products & Research
SiC Products
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If you have inquiry in die size, please contact us.
Research of SiC
Phenitec is participating in "Tsukuba Power Electronics Constellation (TPEC)" of AIST, and is promoting research and development for SiC devices using "SiCkrest", a laminated SiC substrate manufactured by Sicoxe Corp.
Here are some of our research results. (click to view pdf)
-Analysis of Forward Bias Degradation Reduction in 4H-SiC PiN Diodes on Bonded Substrates , presented at Advanced Power Semiconductors 2023
-Electrical property of 1.2 kV-class SiC Trench MOSFETs on Bonded Substrates , presented at Advanced Power Semiconductors 2023
-ICSCRM2022 Reduction of Forward Bias Degradation in 4H-SiC PiN Diodes Fabricated on 4H-SiC Bonded Substrates
-Evaluation of Forward Bias Degradation in 4H-SiC PiN Diodes Fabricated on 4H-SiC Bonded Substrates , presented at Advanced Power Semiconductors 2022
-Annealing-free ohmic realized by bonded SiC substrate , presented at Advanced Power Semiconductors 2020
-Device Characteristics of SBD with Low Cost Direct Bonding Method SiC Wafer , presented at Advanced Power Semiconductors 2019
