Custom FOUNDRY Service

Custom FOUNDRY Service

The 5 and 6-inch manufacturing lines operated by Phenitec are the backbone of our integrated wafer foundry business, covering from epitaxial growth, wafer processing and to testing in Japan.
Utilizing the technological capability and responsiveness, we have developed, since our founding, the products and services that altogether contribute to the growth of our customers.

Supported Devices

We provide our customers with excellent products through our "Design Transfer + Process Transfer" service building wafer process based on mask data and process information provided by customers or our "Design Transfer" service where we handle from process design to production for devices designed by customers. The entire wafer process from epitaxial growth to wafer inspection and testing is capable in-house within Phenitec. We do not own assembly process but do have an outsourcing partner for die sawing. We can also accommodate partial processing. Please contact our sales staff for details.

Production by consigning and Process capability

Product Specification Key Equipment
MOSFET Planer
Trench
Split Gate
Stepper
W-Plug
CMP
Deep RIE
IGBT Planer/Non Punch Through
Planer/Punch Through
Trench/Field Stop
TAIKO
Laser Anneal
High Energy Impact(2-3MeV)
CMOS 0.35μm/6V/2Poly-3Metal
0.6μm/6V/2Poly-2Metal
5V-42V/1Poly-3Metal
WSi
W-Plug
CMP
Diode Fast Recovery Diode
Photo Diode
Ze Diode
Shottky Barrier Diode
Switching Diode
Heavy Metal Diffusion
Metal Sputtering
Bipolar Transistor NPN Transistor:BVCEO(〜800V)
PNP Transistor:BVCEO(〜600V)
 
TVS Single/Anode Common/Bi-Direction
Bi-Direction ESD≧8kV
Uni-Direction ESD≧8kV〜15kV
 
Bipolar IC BVCEO 40V  
MEMS Partial Processing Only Deep RIE
Other Wafer Inspection and Testing
Die sawing
Laser-Trimming
We have multiple fab partners.

Compound Semiconductors

Compound semiconductor has excellent material properties and increasingly being used in PFC circuit and inverter for data center, industrial instrument, EV, railroad vehicle and other applications. Phenitec is involved in this field gaining increasing attention as the world strives to achieve a decarbonized society. Utilizing know-how we have built up from the power device development over many years, we are promoting R&D on power semiconductors using silicon carbide (SiC) and gallium oxide (Ga2O3) for mass production. We have experienced in partial processing for gallium nitride (GaN). For SiC, we have started sample shipment of Schottky device and are proceeding with MOSFET development.

Compound name Device and Specifications Related Major Equipment
SiC MOSFET
SBD
HT Impla
Activation anneal(post implant anneal)
RIE
RTA
Ga2O3 SBD  
GaN    

Production System


     Production site

We have two fabs in Okayama and one in Kagoshima. Each fab handles different devices. For details, refer to "Facility information."

     Certifications

Quality standards: ISO9001 in 2015, IATF16949 in 2016; Environmental / Occupational Safety and Health Standards: ISO14001 in 2015, ISO45001 in 2018. For details, refer to "Approach to Quality, Environment, and Safety and health."

Your analog power IC and the best power management