SiC -产品和研究实绩
SiC device -Products & Research
SiC 产品
点击查看详细规格书。
有关我们产品的更多信息，比如芯片尺寸等，请直接联系我们。
Research of SiC
Phenitec 参与了 AIST 的 "Tsukuba Power Electronics Constellation (TPEC)"，并使用 Cycox 公司制造的层状 SiC 基板 "SiCkrest "促进 SiC 器件的研究和开发。
以下是我们的部分研究成果（点击查看 PDF 文件）
-Analysis of Forward Bias Degradation Reduction in 4H-SiC PiN Diodes on Bonded Substrates , presented at Advanced Power Semiconductors 2023
-Electrical property of 1.2 kV-class SiC Trench MOSFETs on Bonded Substrates , presented at Advanced Power Semiconductors 2023
-ICSCRM2022 Reduction of Forward Bias Degradation in 4H-SiC PiN Diodes Fabricated on 4H-SiC Bonded Substrates
-Evaluation of Forward Bias Degradation in 4H-SiC PiN Diodes Fabricated on 4H-SiC Bonded Substrates , presented at Advanced Power Semiconductors 2022
-Annealing-free ohmic realized by bonded SiC substrate , presented at Advanced Power Semiconductors 2020
-Device Characteristics of SBD with Low Cost Direct Bonding Method SiC Wafer , presented at Advanced Power Semiconductors 2019
