NEWS
SiC Junction Field-Effect Transistors (JFETs)—Prototyping at Our Mass-Production Fab
~A Major Step Toward Commercialization from the Laboratory~
On September 28, 2026, a joint research team consisting of Associate Professor Mitsuaki Kaneko and Professor Tsunenobu Kimoto from the Graduate School of Engineering at Kyoto University and our companyannounced that they had confirmed the proper operation of a 6-inch SiC junction field-effect transistor (JFET).
This announcement marks a major step toward the commercialization of complementary JFET logic circuits utilizing SiC JFETs.
Kyoto University was responsible for the design of the SiC JFET, while prototyping and manufacturing were carried out at our 6-inch SiC mass-production fab.
This announcement marks a major step toward the commercialization of complementary JFET logic circuits utilizing SiC JFETs.
Kyoto University was responsible for the design of the SiC JFET, while prototyping and manufacturing were carried out at our 6-inch SiC mass-production fab.
For more details, please click here.
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