SiC
SiC devices, which are high-performance semiconductor devices made of silicon carbide (SiC), can efficiently convert power due to their high withstand voltage and heat resistance properties.
Owing to their high switching speed and low power loss, their use is increasing, particularly in the fields of electric vehicles and renewable energy.
Expected to be more energy-saving and efficient than conventional silicon devices, they are utilized in the power electronics field, which exploits the full potential of their suitability for high-temperature and high-voltage environments.
Owing to their high switching speed and low power loss, their use is increasing, particularly in the fields of electric vehicles and renewable energy.
Expected to be more energy-saving and efficient than conventional silicon devices, they are utilized in the power electronics field, which exploits the full potential of their suitability for high-temperature and high-voltage environments.
Products
Clicking a button with 
on the right edge opens the datasheet (pdf).
SiC SBD
Under development
2200V
Under development
3300V
SiC MOSFET
Under development
MOSFET 1200V 20A Planer
Under development
MOSFET 1200V 20A Trench
Under development
MOSFET 1200V 50A Planer
Under development
MOSFET 1200V 50A Trench
Under development
MOSFET 1200V 100A Planer
Under development
MOSFET 1200V 100A Trench
Under development
MOSFET 2200V Trench
Under development
MOSFET 2200V Trench
Research on SiC
Participating in the “Tsukuba Power Electronics Constellations (TPEC)” under National Institute of Advanced Industrial Science and Technology (AIST), Phenitec is proceeding with the research and development of SiC devices using “SiCkrest,” a bonded SiC substrate manufactured by Sicoxs Corporation.
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Superior Characteristics of Body Diode in DMOSFET Fabricated on 4H-SiC Bonded Substrate
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Forward bias degradation test evaluation of 1.2 kV trench MOSFETs on bonded SiC substrates, Advanced Power Semiconductors Division 2024
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Analysis of forward bias degradation suppression of 4H-SiC PiN diodes fabricated on 4H-SiC bonded substrates
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Characteristic evaluation of 1.2 kV SiC trench MOSFETs using bonded SiC substrates
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Reduction of Forward Bias Degradation in 4H-SiC PiN Diodes Fabricated on 4H-SiC Bonded Substrates
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Evaluation of forward bias degradation of 4H-SiC_PiN diodes fabricated on 4H-SiC bonded substrates
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Realization of ohmic contact without heat treatment using bonded SiC substrates
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SBD device characteristic evaluation using low-cost bonded SiC substrates
Foundry
SiC device foundry
Phenitec offers a foundry service. If there is anything we can help you with regarding your devices, please do not hesitate to contact us.
CONTACT
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